Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors
Year: 2002
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1491009
Institution: Princeton University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2071871546
