Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers
Year: 2001
Type: article
Source: Journal of Electronic Materials
Authors: S. E. Saddow, T. E. Schattner, J. Brown, L. Grazulis, K. Mahalingam, G. Landis, R. Bertke, W. C. Mitchel
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2071991620
