Year: 2012
Type: article
Abstract: We propose an all-photonic, non-volatile memory, and processing element based on phase-change thin-films deposited onto nanophotonic waveguides. Using photonic microring resonators partially covered with Ge2Sb2Te5 (GST) multi-level memory operation in integrated photonic circuits can be achieved. GST provides a dramatic change in refractive index upon transition from the amorphous to crystalline state, which is exploited to reversibly control both the extinction ratio and resonance wavelength of the microcavity with an additional gating port in analogy to optical transistors. Our analysis shows excellent sensitivity to the degree of crystallization inside the GST, thus providing the basis for non-von Neumann neuromorphic computing.
Source: Applied Physics Letters
DOI: 10.1063/1.4758996
Authors: Wolfram H. P. Pernice, Harish Bhaskaran
Institutions: Karlsruhe Institute of Technology, University of Exeter
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2072340198