Initiation of a passivated interface between hafnium oxide and In(Ga)As( 1)−(4×2)
Year: 2010
Type: article
Source: The Journal of Chemical Physics
DOI: 10.1063/1.3427584
Institutions: Texas State University, University of California San Diego
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2072427360