Work

Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density

Year: 2014

Type: article

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2014.07.018

Authors: Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Filippo Giannazzo, Marcin Krysko, Mike Leszczynski, Fabrizio Roccaforte

Institutions: Institute for Microelectronics and Microsystems, STMicroelectronics (Italy), Institute of High Pressure Physics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2072633681

FWCI: 2.587

Cites: 45

Cited by: 32

Related to: 10