Work

Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

Year: 2007

Type: article

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2007.01.016

Authors: S. Eminente, S. Cristoloveanu, R. Clerc, A. Ohata, G. Ghibaudo

Institution: Institut polytechnique de Grenoble

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2072938838

FWCI: 5.804

Cites: 6

Cited by: 150

Related to: 10