Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ m
Year: 1976
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.88645
Authors: J. J. Hsieh, J. A. Rossi, J. P. Donnelly
Institutions: MIT Lincoln Laboratory, Massachusetts Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2073031826