Work

Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system

Year: 1992

Type: article

Source: Thin Solid Films

DOI: 10.1016/0040-6090(92)90872-9

Author: Atsushi Koma

Institution: The University of Tokyo

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2073682410

FWCI: 4.706

Cites: 20

Cited by: 646

Related to: 10