Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
Year: 2002
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.1481962
Institution: Universidad de Granada
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2073685126