Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s
Year: 1998
Type: article
Authors: R. Oberhuber, G. Zandler, P. Vogl
Institution: Technical University of Munich
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2073720450