Work

High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

Year: 2007

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.2818691

Authors: Chikako Yoshida, Kohji Tsunoda, Hideyuki Noshiro, Yoshihiro Sugiyama

Institution: Fujitsu (Japan)

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2074429207

FWCI: 14.08

Cites: 7

Cited by: 268

Related to: 10