Metal-ferroelectric-metal heterostructures with Schottky contacts. I. Influence of the ferroelectric properties
Year: 2005
Type: article
Abstract: A model for metal-ferroelectric-metal heterostructures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface, a deep trapping level of high concentration, and the static and dynamic values of the dielectric constant. Consequences of the proposed model on relevant quantities of the Schottky contact such as builtin voltage, charge density, and depletion width, as well as on the interpretation of the current-voltage and capacitance-voltage characteristics are discussed in detail.
Source: Journal of Applied Physics
DOI: 10.1063/1.2148622
Authors: L. Pintilie, M. Alexe
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2075604101