Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films
Year: 1998
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.368217
Authors: J. W. McPherson, H. C. Mogul
Institution: Texas Instruments (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2075697254