Year: 2013
Type: article
Abstract: The lack of a bandgap makes bulk graphene unsuitable for room temperature transistors with a sufficient on/off current ratio. Lateral constriction of charge carriers in graphene nanostructures or vertical inversion symmetry breaking in bilayer graphene are two potential strategies to mitigate this challenge, but each alone is insufficient to consistently achieve a large enough on/off ratio (e.g. > 1000) for typical logic applications. Herein we report the combination of lateral carrier constriction and vertical inversion symmetry breaking in bilayer graphene nanoribbons (GNRs) to tune their transport gaps and improve the on/off ratio. Our studies demonstrate that the on/off current ratio of bilayer GNRs can be systematically increased upon applying a vertical electric field, to achieve a largest on/off current ratio over 3000 at room temperature.
Source: Scientific Reports
DOI: 10.1038/srep01248
Authors: Woo Jong Yu, Xiangfeng Duan
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,690
OpenAlex ID: W2076005569
