Work

Quantitative Determination of the Band Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

Year: 2012

Type: article

Abstract: We realized ambipolar field-effect transistors by coupling exfoliated thin flakes of tungsten disulfide (WS(2)) with an ionic liquid dielectric. The devices show ideal electrical characteristics, including very steep subthreshold slopes for both electrons and holes and extremely low OFF-state currents. Thanks to these ideal characteristics, we determine with high precision the size of the band gap of WS(2) directly from the gate-voltage dependence of the source-drain current. Our results demonstrate how a careful use of ionic liquid dielectrics offers a powerful strategy to study quantitatively the electronic properties of nanoscale materials.

Source: Nano Letters

DOI: 10.1021/nl302389d

Authors: Daniele Braga, Ignacio Gutiérrez Lezama, Helmuth Berger, Alberto F. Morpurgo

Institutions: University of Geneva, École Polytechnique Fédérale de Lausanne

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funder: Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

OpenAlex ID: W2076422252

FWCI: 16.3

Cites: 53

Cited by: 525

Related to: 10