Work

Extremely low drift of resistance and threshold voltage in amorphous phase change nanowire devices

Year: 2010

Type: article

Abstract: Time-dependent drift of resistance and threshold voltage in phase change memory (PCM) devices is of concern as it leads to data loss. Electrical drift in amorphous chalcogenides has been argued to be either due to electronic or stress relaxation mechanisms. Here we show that drift in amorphized Ge2Sb2Te5 nanowires with exposed surfaces is extremely low in comparison to thin-film devices. However, drift in stressed nanowires embedded under dielectric films is comparable to thin-films. Our results shows that drift in PCM is due to stress relaxation and will help in understanding and controlling drift in PCM devices.

Source: Applied Physics Letters

DOI: 10.1063/1.3447941

Authors: Mukut Mitra, Yeonwoong Jung, Daniel S. Gianola, Ritesh Agarwal

Institution: University of Pennsylvania

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2077640326

FWCI: 4.716

Cites: 21

Cited by: 99

Related to: 10