Work

Effects of Sn+ Ion Implantation and Post-Implantation Annealing on the Thermoelectric Properties of n-Type PbTe in FGM Design

Year: 1999

Type: article

Abstract: Sn . ions were implanted into n-type lead telluride with doses of 6×10 16 and 1×10 17 ions/cm 2 at an energy of 200 KeV. The thermoelectric properties of temperature dependence of the implanted and the unimplanted samples after annealing were investigated. Thermoelectric figure of merit was calculated using the measured data. It has been found that Sn' ion implantation can form a two layered FGM with stepwise carrier concentration, and modify the thermoelectric properties of n-type PbTe.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.308-311.711

Authors: Qiang Shen, Li Jun Zhang, Gang Wang, Leng Chen, Rong Tu, Toshio Hirai

Institutions: Wuhan University of Technology, Taiyuan University of Technology, Northeastern University, University of Science and Technology Beijing, Tohoku University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2077795798

FWCI: 0.275

Cites:

Cited by: 3

Related to: 10