Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal–Oxide–Semiconductor Field-Effect Transistor and Performance Perspective
Year: 2003
Type: article
Abstract: In this paper, we describe the operation characteristics of a silicon-on-insulator (SOI) tunneling-barrier-junction (TBJ) metal–oxide–semiconductor field-effect transistor (MOSFET) and simulation methods with the aid of the commercial two-dimensional (2-D) device simulator. No scattering (ballistic transport) is assumed in the electron conduction. It is shown that the device exhibits current-voltage characteristics similar to those of the conventional MOSFET. The subthreshold swing and off-leakage current of the device are much smaller than those of modern MOSFETs; short-channel effects are sufficiently suppressed. However, the drive current of TBJ MOSFET is smaller than that of the conventional MOSFET. In order to increase the drive current, the optimization method for the device structure of TBJ MOSFET is discussed in detail.
DOI: 10.1143/jjap.42.1206
Institution: Kansai University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2078215499