n+ -GaAs/undoped GaAlAs/undoped GaAs field-effect transistor
Work
Year: 1984
Type: article
Source: Electronics Letters
Cites:
Cited by: 59
Related to: 10
FWCI: 5.998
Citation percentile (by year/subfield): 82.22
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed