Year: 1997
Type: article
Abstract: The results of high-frequency mixing experiments performed upon parallel quantum point contacts defined in the two-dimensional electron gas of an AlxGa1−xAs/GaAs heterostructure are presented. The parallel geometry, fabricated using a novel double-resist technology, enables the point-contact device to be impedance matched over a wide frequency range and, in addition, increases the power levels of the mixing signal while simultaneously reducing the parasitic source-drain capacitance. Here, we consider two parallel quantum point-contact devices with 155 and 110 point contacts, respectively; both devices operated successfully at liquid helium and liquid nitrogen temperatures with a minimal conversion loss of 13 dB.
Source: Applied Physics Letters
DOI: 10.1063/1.119139
Authors: A. G. C. Haubrich, D. A. Wharam, H. Kriegelstein, S. Manus, A. Lorke, J. P. Kotthaus, A. C. Gossard
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2079272209