Work

Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)

Year: 2002

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1455155

Authors: P. D. Kirsch, C. S. Kang, J. Lozano, J. C. Lee, J. G. Ekerdt

Institution: The University of Texas at Austin

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

OpenAlex ID: W2079499708

FWCI: 28.7

Cites: 40

Cited by: 263

Related to: 10