Work

On the Crossing-Point of 4H-SiC Power Diodes Characteristics

Year: 2014

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2013.2294078

Authors: Luigi Di Benedetto, Gian Domenico Licciardo, Roberta Nipoti, Salvatore Bellone

Institutions: University of Salerno, National Research Council, Institute for Microelectronics and Microsystems, University of Bologna

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2079730158

FWCI: 2.651

Cites: 13

Cited by: 24

Related to: 10