Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator
Year: 2003
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.1630693
Institution: University of California, Santa Barbara
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2080111729