Year: 1975
Type: article
Abstract: Polycrystalline PbTe thin films are prepared on glass substrates by means of evaporation under various conditions of the substrate temperature. Their electrical properties as a function of temperature and strain are investigated. The transition of conduction type from N -type to P -type occurs in the vicinity of the substrate temperature of 270°C and variable X =0.47 in Pb 1- X Te X . This is explained with the vacancy-model. Although Pb vacancies contribute P -type conduction for the films prepared at high substrate temperature, they are overcompensated by doping excess Pb atoms. The analysis of the piezoresistance effect yields the gauge factor ( G ) as combinations of longitudinal gauge factor ( G L ) and transverse one ( G T ).
DOI: 10.1143/jjap.14.466
Authors: Satoru Todoroki, Yoshiharu Onuma
Institution: Shinshu University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2080131596