Work

A study on performance degradation of SiC MOSFET for burn-in test of body diode

Year: 2013

Type: conference-paper

Source: IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG)

DOI: 10.1109/pedg.2013.6785593

Author: Tsuyoshi Funaki

Institution: The University of Osaka

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2080202942

FWCI: 1.223

Cites: 8

Cited by: 18

Related to: 10