Work

Compact and low loss silicon-on-insulator rib waveguide 90° bend

Year: 2006

Type: article

Abstract: A compact and low loss silicon-on-insulator rib waveguide 90 degrees bend is designed and demonstrated. An interface realized by a trench filled with SU8 at the corner of a waveguide bend effectively reflects incoming light through total internal reflection (TIR). In order to accurately position the SU8-filled trench relative to the waveguide and reduce sidewall roughness of the interface, electron beam lithography (EBL) is employed while inductively coupled plasma reactive ion etching (ICP RIE) is used to achieve a vertical sidewall. The measured loss for TE polarization is 0.32 dB +/- 0.02 dB/bend at a wavelength of 1.55 microm.

Source: Optics Express

DOI: 10.1364/oe.14.006020

Authors: Yusheng Qian, Seunghyun Kim, Jiguo Song, Gregory P. Nordin, Jianhua Jiang

Institutions: Brigham Young University, University of Alabama in Huntsville

Language: English

Topic: Photonic and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270

Funders: National Science Foundation, Defense Advanced Research Projects Agency