Work

C.M.O.S. devices fabricated on buried SiO 2 layers formed by oxygen implantation into silicon

Year: 1978

Type: article

Source: Electronics Letters

DOI: 10.1049/el:19780397

Authors: K. Izumi, M. Doken, H. Ariyoshi

Institution: NTT (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2080856527

FWCI: 4.494

Cites: 5

Cited by: 550

Related to: 10