Trap creation in silicon dioxide produced by hot electrons
Year: 1989
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.342824
Authors: D. J. DiMaria, J. W. Stasiak
Institution: IBM Research - Thomas J. Watson Research Center
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2081048183