Work

An innovating technological approach for Si–SiGe superlattice integration into thermoelectric modules

Year: 2008

Type: article

Abstract: This paper presents the development of doped polycrystalline Si–SiGe superlattices as thermoelectric (TE) elements integrated into generators. The modules dimension is 1 cm 2 , Si and SiGe are in situ doped (n and p types) and realized by CVD (chemical vapor deposition) on a 4 inch (0 0 1) silicon wafer. Si–SiGe superlattice growth will be studied, as well as the integration into thermoelectric modules. Interest in using superlattices as TE materials will be justified by their thermal conductivity measurements. Moreover, process fabrication and different geometry designs will be presented. Finally, the first measurements realized on these modules allowed scavenging 320 mV for a temperature difference of 90 K.

Source: Journal of Micromechanics and Microengineering

DOI: 10.1088/0960-1317/18/10/104002

Authors: G Savelli, M Plissonnier, V Remondière, J Bablet, J-M Fournier

Institutions: Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux, CEA Grenoble, Laboratoire de Génie Électrique de Grenoble

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: bronze

OpenAlex ID: W2081214265

FWCI:

Cites: 17

Cited by: 8

Related to: 10