Capacitance-voltage characteristics of amorphous silicon thin-film transistors
Year: 1989
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.344134
Authors: Michael Shur, Michael Hack, John G. Shaw, R. A. Martin
Institutions: University of Virginia, Palo Alto Research Center
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2082223145