Work

Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates

Year: 2001

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.1372359

Authors: X. Guo, E. F. Schubert

Institution: Boston University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2082224053

FWCI: 1.695

Cites: 7

Cited by: 223

Related to: 10