Work

High‐Mobility ZnO Thin Film Transistors Based on Solution‐processed Hafnium Oxide Gate Dielectrics

Year: 2014

Type: article

Source: Advanced Functional Materials

DOI: 10.1002/adfm.201402684

Authors: Mazran Esro, George Vourlias, Christopher Somerton, William I. Milne, George Adamopoulos

Institutions: Lancaster University, Aristotle University of Thessaloniki, University of Cambridge, Kyung Hee University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2082353118

FWCI: 9.405

Cites: 57

Cited by: 185

Related to: 10