Spin splitting of subband energies due to inversion asymmetry in semiconductor heterostructures
Year: 2003
Type: article
Abstract: We review the spin splitting of subband energies caused by bulk and structure inversion asymmetries in semiconductor III–V and II–VI heterostructures. We present both theoretical and experimental aspects of the problem, and we discuss the spin splitting in the absence of external fields as well as its dependence on magnetic and electric fields. The theoretical description of conduction and valence subbands is based on a multiband k ⋅ p formalism. Experimental results are summarized, as obtained by beatings of the Shubnikov–de Haas oscillations, magnetoconductance in antilocalization regime, Raman scattering, spin resonance and cyclotron resonance. This review article is motivated by recent interest in spin properties of heterostructures in view of spintronic applications.
Authors: W Zawadzki, P Pfeffer
Institutions: Institute of Physics, Polish Academy of Sciences
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2082766988
