Work

Epitaxial growth of AlN on c-plane sapphire by High Temperature Hydride Vapor Phase Epitaxy: Influence of the gas phase N/Al ratio and low temperature protective layer

Year: 2013

Type: article

Source: Surface and Coatings Technology

DOI: 10.1016/j.surfcoat.2013.08.016

Authors: R. Boichot, N. Coudurier, F. Mercier, S. Lay, A. Crisci, S. Coindeau, A. Claudel, E. Blanquet, M. Pons

Institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Université Joseph Fourier, Science et Ingénierie des Matériaux et Procédés, Acerde (France)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2083072734

FWCI: 1.313

Cites: 39

Cited by: 17

Related to: 10