Work

Energetics of native point defects in GaN: A density-functional study

Year: 2015

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/j.mee.2015.04.015

Authors: Giacomo Miceli, Alfredo Pasquarello

Institution: École Polytechnique Fédérale de Lausanne

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: National Science Foundation, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Awards: Defects at GaAs/Oxide Interfaces and in Mg-Doped GaN via Hybrid Density Functionals, Defect Levels at Interfaces of High-Mobility Semiconductors through Hybrid Density Functionals, G5599649393, G628552264

OpenAlex ID: W2083269469

FWCI: 3.544

Cites: 31

Cited by: 64

Related to: 10