Work

Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation

Year: 2010

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.3490199

Authors: O. Moshe, D. H. Rich, S. Birner, M. Povolotskyi, B. Damilano, J. Massies

Institutions: Ben-Gurion University of the Negev, Purdue University West Lafayette, Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2083633692

FWCI: 0.709

Cites: 32

Cited by: 6

Related to: 10