Electronic states tuning of InAs self-assembled quantum dots
Year: 1998
Type: article
Abstract: We demonstrate the dimensional tuning of InAs self-assembled quantum dots (QDs) by changing the growth kinetics during the capping of InAs islands with GaAs. Modifying the growth sequence during the capping of InAs islands, allows us to tune the thickness and lateral dimensions of the QDs while keeping the wetting layer thickness constant. Using the same method but embedding the tuned InAs islands into AlAs layers allows to further blueshift the photoluminescence emission to higher energies while keeping the wetting layer thickness constant. The main process responsible for the QDs size modification is consistent with a kinetically controlled materials redistribution of the InAs islands that minimizes the energy of the epitaxial layers at the start up of the GaAs capping deposition.
Source: Applied Physics Letters
DOI: 10.1063/1.121583
Institution: University of California, Santa Barbara
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2084237064