Work

Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond

Year: 1999

Type: article

Source: Solid-State Electronics

DOI: 10.1016/s0038-1101(99)00090-8

Authors: A Hokazono, K Tsugawa, H Umezana, K Kitatani, H Kawarada

Institutions: Waseda University, Japan Science and Technology Agency

Language: English

Topic: Diamond and Carbon-based Materials Research

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, Culture, Sports, Science and Technology, Murata Science Foundation

OpenAlex ID: W2084350859

FWCI: 1.43

Cites: 17

Cited by: 25

Related to: 10