Year: 1979
Type: article
Abstract: The thermoelectric power of n-GaAs has been computed at different lattice temperatures and electron concentrations incorporating the band non-parabolicity, the p-function admixture and the effects of electron screening and degeneracy on scattering probabilities. All the relevant scattering mechanisms have been considered and the currently established material parameters are used in the computations. The calculated results agree very well with experiment.
Authors: S K Sutadhar, D Chattopadhyay
Institution: University of Calcutta
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2084936170
