Work

GaN Power Transistors on Si Substrates for Switching Applications

Year: 2010

Type: article

Source: Proceedings of the IEEE

DOI: 10.1109/jproc.2009.2034397

Authors: Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi, Yoshihiro Sato, Takehiko Nomura, Sadahiro Kato, Seikoh Yoshida

Institution: Furukawa Electric (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W2085066220

FWCI: 17.05

Cites: 34

Cited by: 528

Related to: 9