Work

Modeling of Leakage Current Mechanisms in Nanoscale DG MOSFET and its Application to Low Power SRAM Design

Year: 2008

Type: article

Source: Journal of Computers

DOI: 10.4304/jcp.3.2.37-47

Authors: Deblina Sarkar, Deepanjan Datta, S. Dasgupta

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2085280584

FWCI:

Cites: 12

Cited by: 5

Related to: 10