Work

Ion-sensing devices with silicon nitride and borosilicate glass insulators

Year: 1987

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1987.23140

Authors: D.L. Harame, L.J. Bousse, J.D. Shott, J.D. Meindl

Institutions: IBM Research - Thomas J. Watson Research Center, Stanford University, Rensselaer Polytechnic Institute

Language: English

Topic: Analytical Chemistry and Sensors

Subfield: Analytical Chemistry

Field: Chemistry

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2085477285

FWCI: 3.288

Cites: 28

Cited by: 228

Related to: 10