Work

Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

Year: 2006

Type: article

Abstract: High-power device technology is a key technological factor for wireless communication, which is one of the information network infrastructures in the 21st century, as well as power electronics innovation, which contributes considerably to solving the energy saving problem in the future energy network. Widegap semiconductors, such as SiC and GaN, are strongly expected as high-power high-frequency devices and high-power switching devices owing to their material properties. In this paper, the present status and future prospect of these widegap semiconductor high-power devices are reviewed, in the context of applications in wireless communication and power electronics.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.45.7565

Author: Hajime Okumura

Institutions: Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: bronze

Funders: National Institute of Advanced Industrial Science and Technology, Ritsumeikan University