Year: 2015
Type: article
Abstract: ZnSb samples have been doped with copper and phosphorus and sintered at 798 K. Electronic transport properties are interpreted as being influenced by an impurity band close to the valence band. At low Cu dopant concentrations, this impurity band degrades the thermoelectric properties as the Seebeck coefficient and effective mass are reduced. At carrier concentrations above 1 × 1019 cm−3, the Seebeck coefficient in Cu doped samples can be described by a single parabolic band.
Source: Journal of Applied Physics
DOI: 10.1063/1.4906404
Authors: K. Valset, X. Song, T. G. Finstad
Institution: University of Oslo
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2086215014