Integration of on-chip field-effect transistor switches with dopantless Si/SiGe quantum dots for high-throughput testing
Year: 2013
Type: article
Abstract: Measuring multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip field-effect transistor switches to enable multiplexed cryogenic measurements of double quantum dot Si/SiGe devices. Multiplexing enables the characterization of a number of devices that scales exponentially with the number of external wires, a key capability given the significant constraints on cryostat wiring. Using this approach, we characterize three quantum-point contact channels and compare threshold voltages for accumulation and pinch-off voltages during a single cool-down of a dilution refrigerator.
Source: Applied Physics Letters
DOI: 10.1063/1.4807768
Authors: D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson
Institution: University of Wisconsin–Madison
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2086519394