Work

The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with interlayers

Year: 2009

Type: article

Source: Superlattices and Microstructures

DOI: 10.1016/j.spmi.2009.09.009

Authors: Engin Arslan, Özgür Duygulu, Ali Arslan Kaya, Ali Teke, Süleyman Özçelik, Ekmel Ozbay

Institutions: Bilkent University, TÜBİTAK Marmara Research Center, Muğla University, Balıkesir University, Gazi University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: European Commission, Türkiye Bilimsel ve Teknolojik Araştırma Kurumu, Türkiye Bilimler Akademisi

Awards: G1078344578, G1663331382, Bilkent Üniversitesi nanoteknoloji araştırma merkezi destekleme projesi (NANOTR), G3645712749, G7158958599, G7202165465, G8055813605, G8967657412

OpenAlex ID: W2086676772

FWCI: 0.816

Cites: 33

Cited by: 17

Related to: 10