Work

Migration of interstitials in silicon

Year: 1984

Type: article

Source: Physical review. B, Condensed matter

DOI: 10.1103/physrevb.30.3460

Authors: G. A. Baraff, M. Schlüter

Institution: AT&T (United States)

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2086728875

FWCI: 15.43

Cites: 20

Cited by: 206

Related to: 10