Work

Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments

Year: 1970

Type: article

Source: Solid-State Electronics

DOI: 10.1016/0038-1101(70)90064-x

Authors: C.T. Sah, L. Forbes, L.L. Rosier, A.F. Tasch

Institutions: University of Illinois Urbana-Champaign, University of Illinois System

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2086783561

FWCI: 18.25

Cites: 20

Cited by: 454

Related to: 10