Work

Spin-polarized light-emitting diode using metal/insulator/semiconductor structures

Year: 2002

Type: article

Abstract: We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/Al2O3/AlGaAs heterostructures with homogeneous flat interfaces. The electroluminescence from a light-emitting diode with a metal/insulator/semiconductor (MIS) structure depends on the magnetization direction of the ferromagnetic electrode. This fact shows that a spin injection from the ferromagnetic metal to the semiconductor is achieved. The spin-injection efficiency is estimated to be the order of 1% at room temperature.

Source: Applied Physics Letters

DOI: 10.1063/1.1496493

Authors: T. Manago, H. Akinaga

Institution: National Institute of Advanced Industrial Science and Technology

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2087069452

FWCI: 6.261

Cites: 16

Cited by: 102

Related to: 10