Year: 2006
Type: article
Abstract: A topical review is given of the physics of submicron ferroelectrics, describing the application considerations for memory devices (both as switching memory elements for ferroelectric nonvolatile random access memories, FRAMs, and as passive capacitors for volatile dynamic random access memories, DRAMs) as well as the fundamental physics questions regarding both the thickness and lateral size of present interest.
Author: J F Scott
Institution: University of Cambridge
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2087189371